Power Savings in a Content Addressable Memory Device Using Masked Pre-Compare Operations

ABSTRACT

A CAM device for comparing a search key with a plurality of ternary words stored in a CAM array includes one or more population counters, a pre-compare memory, and a pre-compare circuit. The present embodiments reduce the power consumption of CAM devices during compare operations between a search key and ternary words stored in a CAM array by selectively enabling the match lines in the CAM array in response to pre-compare operations between a set of population counts corresponding to the masked search key and a set of population counts corresponding to the ternary words stored in the CAM array.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.13/345,128, filed Jan. 6, 2012, which will issue as U.S. Pat. No.8,619,451 on Dec. 31, 2013, which is incorporated by reference herein inits entirety.

TECHNICAL FIELD

This disclosure relates generally to semiconductor memories andspecifically to reducing power consumption in content addressablememories.

DESCRIPTION OF RELATED ART

Content addressable memory (CAM) devices are frequently used in networkswitching and routing applications to determine forwarding destinationsfor data packets. A CAM device can be instructed to compare a selectedportion of an incoming packet (e.g., a destination address extractedfrom the packet header) with CAM words (e.g., forwarding addresses)stored in an array within the CAM device. If there is a matching entrystored in the CAM array, the index of the matching CAM word can be usedto access a corresponding location in an associated memory device toretrieve a destination address and/or other routing information for thepacket.

A CAM device includes a CAM array having a number of rows of CAM cells,each for storing a CAM word. During a compare operation, a search key(e.g., a comparand word) is provided to the CAM array and compared withthe CAM words stored therein. For each CAM word that matches the searchkey, a corresponding match line is asserted to indicate the matchresult. If any of the match lines are asserted, a match flag is assertedto indicate the match condition, and a priority encoder determines thematch address or index of the highest priority matching entry in the CAMarray.

Typically, the match lines of the CAM array are pre-charged toward asupply voltage (e.g., to logic high) prior to the compare operation.During the compare operation, if the CAM word stored in a row matchesthe search key, the row's match line remains in its charged state toindicate a match condition for the row. Conversely, if the CAM wordstored in a row does not match the search key, the row's match line isdischarged toward ground potential (e.g., to logic low) by the one ormore mismatching CAM cells to indicate a mismatch condition for the row.The discharged match lines are then pre-charged to the supply voltagefor the next compare operation.

Alternately charging and discharging the match lines in a CAM array forcompare operations may result in significant power consumption. Thispower consumption increases as the size and/or density of the CAM arrayincreases and, therefore, undesirably limits the memory size and thescalability of the CAM array. Thus, it would be desirable to reduce thepower consumption associated with pre-charging the match lines of a CAMarray for compare operations.

BRIEF DESCRIPTION OF THE DRAWINGS

Present embodiments are illustrated by way of example, and not by way oflimitation, in the figures of the accompanying drawings and in whichlike reference numerals refer to similar elements and in which:

FIG. 1 is a block diagram of a CAM device with a pre-compare CAM array;

FIG. 2 is a block diagram of a ternary CAM device that incorporates thepre-compare CAM array technique of FIG. 1;

FIG. 3A is a block diagram of a CAM device in accordance with presentembodiments;

FIG. 3B is a block diagram of one embodiment of the CAM array of FIG.3A;

FIG. 4 is a block diagram illustrating how binary data and masks can becollectively represented in ternary forms;

FIG. 5 is a block diagram of an embodiment of the pre-compare circuit ofFIG. 3;

FIG. 6 is an illustration of how a comparison between data and keypopulation counts may prevent unnecessary pre-charging according to someembodiments;

FIG. 7 is a block diagram of one embodiment of a row of the CAM array ofFIGS. 3A-3B; and

FIG. 8 is a flow chart illustrating an exemplary pre-compare operationfor embodiments of the CAM device of FIG. 3.

DETAILED DESCRIPTION

Methods and apparatuses for reducing power consumption in a CAM deviceare disclosed. It is to be understood that present embodiments areequally applicable to other memory structures such as, for example, RAM,EPROM, EEPROM, and flash memory devices, as well as other memoryarchitectures including, for example, translation look-aside buffers(TLBs) and look-up tables (LUTs). In the following description, forpurposes of explanation, specific nomenclature is set forth to provide athorough understanding of the present embodiments. However, it will beapparent to one skilled in the art that these specific details may notbe required to practice the present embodiments. In other instances,well-known circuits and devices are shown in block diagram form to avoidobscuring the present embodiments unnecessarily. Additionally, theinterconnection between circuit elements or blocks may be shown as busesor as single signal lines. Each of the buses may alternatively be asingle signal line, and each of the single signal lines mayalternatively be a bus. Further, the logic levels assigned to varioussignals in the description below are arbitrary, and therefore may bemodified (e.g., reversed polarity) as desired. Accordingly, the presentembodiments are not to be construed as limited to specific examplesdescribed herein but rather include within their scope all embodimentsdefined by the appended claims.

FIG. 1 is a block diagram of a CAM device 100 that incorporates apre-compare CAM array. In FIG. 1, CAM device 100 is shown to include aCAM array 110, which includes a pre-compare CAM array 112, match linecontrol logic 114, and a main CAM array 116. CAM array 110 is alsocoupled to a first function generator 171 and to a second functiongenerator 172. First function generator 171 includes an input to receivefrom a data bus DBUS or a read/write circuit 140 a CAM word that is tobe written into main CAM array 116, and one or more outputs coupled tocorresponding columns of pre-compare CAM array 112 via read/writecircuit 145. First function generator 171 performs a predeterminedlogical function on the CAM word to generate a corresponding set ofpre-compare bits, which are then stored into a corresponding row ofpre-compare CAM array 112. Second function generator 172 uses the samelogical function as the one used by first function generator 171 togenerate the encoded search key. Pre-compare CAM array 112 then performspre-compare operations between the encoded search key and the sets ofpre-compare bits stored in pre-compare CAM array 112 to generatepre-compare match results on corresponding pre-compare match lines inpre-compare CAM array 112. Match line control logic 114 is configured toselectively pre-charge the main match lines in main CAM array 116 inresponse to pre-compare match results in pre-compare CAM array 112. Inthis manner, for each row in main CAM array 116 that is not pre-chargedfor a compare operation with the search key, power consumptionassociated with match line pre-charging is saved, therefore reducing theoverall power consumption of CAM device 100.

As compared to binary CAM arrays, when a CAM array stores ternary datavalues, the pre-compare technique of FIG. 1 uses additional circuits tohandle individual mask words associated with ternary CAM arrays. Shownin FIG. 2 is a ternary CAM device 200 that implements this pre-comparetechnique. Within the ternary CAM device 200, instead of storing abinary CAM word, each row in main ternary CAM array 216 stores a CAMword and an associated main local mask word that stores masking data forthe corresponding CAM word. The read/write circuit 140 includes anadditional input to receive a main local mask word MSK. CAM device 200further includes a mask function generator 273 and a multiplexer (MUX)275. Mask function generator 273 generates pre-compare local mask wordPCMSK by performing a selected logical function on the main local maskword MSK, and provides PCMSK to a first input of MUX 275, which alsoincludes a second input to receive the pre-compare bits (PCB) from firstfunction generator 171, a control terminal to receive a control signalCTRL, and an output coupled to read/write circuit 145. Through togglingthe control signal CTRL, MUX 275 provides PCB and a corresponding PCMSKto read/write circuit 145, which in turn stores PCB and correspondingPCMSK into pre-compare CAM array 212 for pre-compare operations. Eachrow in pre-compare CAM array 212 stores a number of pre-compare bits(PCB bits) and an associated pre-compare local mask word (PCB mask) thatmasks the corresponding pre-compare bits on a bit-by-bit basis. In thismanner, pre-compare CAM array 212 of FIG. 2 may reduce power consumptionin a similar fashion to pre-compare CAM array 112 of FIG. 1.

However, the additional circuits mentioned above invariably increasepower consumption of CAM device 200 and increase latency of CAM device200. Nevertheless, to further include a block mask feature for thecomparand (e.g., from a block mask register, not shown in FIG. 2 forsimplicity), CAM device 200 should include the same additional circuitsfor second function generator 172, thereby further increasing powerconsumption and latency.

Perhaps more importantly, this pre-compare array technique is lesseffective in ternary CAM devices than in binary CAM devices. Morespecifically, if any of the bits in MSK are asserted, then mask functiongenerator 273 asserts one or more corresponding bits in PCMSK. As aresult, not only are bits in the CAM word masked by correspondingasserted bits in the associated local mask, but an extra portion of theCAM word is masked. This is to prevent the situation where bits whichare masked in the main CAM array 216 cause the corresponding pre-compareentry to mismatch thereby preventing main CAM array entry frompre-charging its match line and participating in the compare operation.However, in the course of doing so, the corresponding pre-compare CAMarray 212 can generate a match even when a match is impossible. Thepercentage of mismatch conditions in pre-compare operations is therebydecreased, which in turns cuts the benefit of reductions in powerconsumption by performing pre-compare operations.

For example, if each row of main ternary CAM array 216 includes foursegments of CAM cells for storing respective 4-bit portions D0[0:3],D1[0:3], D2[0:3], and D3[0:3] of a CAM word, then main local mask wordMSK includes four segments, each for storing respective 4-bit portionsMSK0[0:3], MSK1[0:3], MSK2[0:3], and MSK3[0:3]. For this example, maskfunction generator 273 may generate four corresponding pre-compare maskbits PCMSK[0:3], where PCMSK[0]=f_(m){MSK0[0:3]},PCMSK[1]=f_(m){MSK1[0:3]}, PCMSK[2]=f_(m){MSK2[0:3]}, andPCMSK[3]=f_(m){MSK3[0:3]}, where f_(m) is, for example, a bit-wiselogical OR function performed by mask function generator 273. Then, ifthere are one or more mask bits asserted in each of MSK0[0:3],MSK1[0:3], MSK2[0:3], and MSK3[0:3], respectively, the mask functiongenerator 273 asserts all four bits of PCMSK[0:3], which in turn forcesthe pre-compare array 212 to indicate a match for all four segments. Inthis example, the usefulness of having a pre-compare array 212 isseverely diminished because the pre-compare array 212 enables acorresponding row in the main CAM array 216 for compare operations evenwhen there is no possibility of a match condition therein.

Under the same principle, if a CAM word has a corresponding local maskword with many scattered asserted mask bits, then mask functiongenerator 273 asserts a significant number of mask bits in acorresponding pre-compare local mask word, thereby increasing theprobability of unnecessary pre-charging a corresponding main match line.This decreases the effectiveness of the pre-compare array technique ofFIG. 2. Therefore, it is desirable to have a pre-compare circuit thataccommodates a data word and its corresponding local mask word withoutdiminishing the effectiveness of the pre-compare operation.

The present embodiments reduce the power consumption of CAM devicesduring compare operations between a search key and ternary words storedin a CAM array by selectively enabling the match lines in the CAM arrayin response to pre-compare operations between a set of population countscorresponding to the search key and sets of population countscorresponding to the ternary words stored in the CAM array. For someembodiments, a binary search key is combined with a block mask to form aternary or masked search key (e.g., where the block mask serves to maskthe binary search key to form the masked search key). According topresent embodiments, the population counts are generated using apopulation counter. For some embodiments, the set of population countscorresponding to the masked search key is generated by determining afirst value indicating how many bits of the masked search key have thesame predetermined logic value, and determining a second valueindicating how many bits of the masked search key have the samepredetermined logic value plus how many bits of the masked search keyare don't care values,. For some embodiments, each of the sets ofpopulation counts corresponding to the ternary words is generated bydetermining a third value indicating how many bits of the ternary wordhave the same predetermined logic value, and a fourth value indicatinghow many bits of the ternary word have the same predetermined logicvalue plus how many bits of the ternary word are don't care values. Inaccordance with present embodiments, a pre-compare circuit compares thefirst and fourth values and compares the second and third values todetermine whether a match in the CAM array is possible, and in responsethereto selectively pre-charges the match lines of corresponding rows ofthe CAM array. For certain embodiments, the population counter for themasked search key and the population counter for the ternary word sharethe same circuit.

For simplicity, generation of the population counts is described hereinas being performed on the whole ternary word to generate a set ofpopulation counts for each row. However, for other embodiments, each rowcan include a plurality of segments, and population counts can begenerated for each segment of a ternary word to generate correspondingsets of population counts.

FIG. 3A shows a block diagram of a CAM device 300 in accordance with thepresent embodiments. CAM device 300 is shown to include a ternary CAMarray 315, a comparand register 130, a block mask register 340, andread/write circuit 140. CAM device 300 further includes a pre-comparememory 312, a pre-compare circuit 314, a first population counter 316,and a second population counter 318. One or more instructions andrelated control signals can be provided to CAM device 300 from aninstruction decoder (not shown for simplicity) to control read, write,compare, initialization, and other operations for CAM device 300. Otherwell-known signals that can be provided to CAM device 300, such asenable signals, clock signals, and power connections, are not shown forsimplicity.

Ternary CAM array 315 includes a plurality of rows, each including anynumber of CAM cells (not shown in FIG. 3A for simplicity) for storing acorresponding ternary word. Although depicted in FIG. 3A and describedbelow as ternary, the CAM cells can be any suitable type of CAM cellincluding, for example, binary CAM cells, ternary CAM cells, and/orquaternary CAM cells. Each row of CAM cells in ternary CAM array 315 iscoupled to an address decoder via a corresponding word line WL (notshown for simplicity), and is also coupled to priority encoder 150 andmatch logic 160 via a corresponding match line ML. For simplicity, thematch lines ML are represented collectively in FIG. 3A. In addition, forsome embodiments, CAM device 300 includes a well-known match latchcircuit (not shown for simplicity) coupled between the match lines MLand priority encoder to latch match results generated in ternary CAMarray 315.

As shown in FIG. 3A, each row in ternary CAM array 315 stores a dataword and an associated mask word that collectively represent a ternaryCAM word. Thus, each mask word masks a corresponding data word on abit-by-bit basis. For example, mask word (1) stores masking data fordata word (1), mask word (2) stores masking data for data word (2), andso on. Similarly, comparand register 130 stores a search key for ternaryCAM array 315, and block mask register 340 stores a block mask thatstores masking data for selectively masking the search key on abit-by-bit basis. Together, the search key and the block mask representthe masked search key, as depicted in FIG. 4.

First population counter 316 is coupled to read/write circuit 140 toreceive a data word and a mask word, which collectively represent acorresponding ternary word to be stored in a row of the ternary CAMarray 315. In operation, first population counter 316 performs apopulation count calculation on the corresponding ternary word togenerate a minimum data population count (D_(MIN)) and a maximum datapopulation count (D_(MAX)), where D_(MIN) indicates how many bits of thecorresponding ternary word have the same predetermined logic value, andD_(MAX) indicates how many bits of the corresponding ternary word havethe same predetermined logic value plus the number of asserted mask bitswithin the corresponding ternary word. Thus, for some embodiments,D_(MIN) indicates how many bits of the ternary word have a logic “1”value, and D_(MAX) indicates how many bits of the ternary word have alogic “1” value plus how many bits of the ternary word are don't carevalues. In this example, a logic “1” value for a mask bit indicates thatthe mask bit is asserted and thus will mask the corresponding bit of thedata word.

For example, FIG. 4 shows a 10-bit binary data word {0011001011} and anassociated 10-bit binary mask word {0001100010} that collectivelyrepresent a 10-bit ternary word {001XX010X1}, where X represents a“don't care” value, as depicted in FIG. 4. Therefore, for this example,since there are three “1's” in the ternary word, D_(MIN)=3. Similarly,since there are three “1's” and three “X's” in the ternary word,D_(MAX)=6.

Of course, for other embodiments, D_(MIN) can indicate the number ofbits within the corresponding ternary word having a logic “0” value, andD_(MAX) can indicate the number of bits of the corresponding ternaryword having a logic “0” value, plus the number of asserted mask bits(i.e., the number of bits in the ternary word having a don't-care value)in the corresponding ternary word. For such embodiments, D_(MIN)=4 andD_(MAX)=7 for the ternary word of FIG. 4.

Pre-compare memory 312 includes an input to receive sets of minimum datapopulation counts D_(MIN) and maximum data population counts D_(MAX)from first population counter 316. More specifically, pre-compare memory312 includes a plurality of rows, each for storing a set of D_(MIN) andD_(MAX) values for a corresponding ternary word stored in an associatedrow of ternary CAM array 315. For example, D_(MIN)(1) and D_(MAX)(1) areminimum and maximum population counts for ternary word (1), D_(MIN)(2)and D_(MAX)(2) are minimum and maximum population counts for ternaryword (2), and so on. Pre-compare memory 312 also includes a plurality ofoutputs to provide sets of D_(MIN) and D_(MAX) values to pre-comparecircuit 314 for pre-compare operations.

In some embodiments, in contrast to pre-compare CAM array 112 of FIG. 1,pre-compare memory 312 does not include CAM cells, but rather is formedusing any suitable type of storage cell including, for example, an SRAMcell, a DRAM cell, an EEPROM cell, a flash memory cell, a latch, or aregister.

Second population counter 318 is architecturally and functionallysimilar to first population counter 316. Second population counter 318is coupled to comparand register 130 to receive a search key, and toblock mask register 340 to receive a block mask. Together, the searchkey and the block mask collectively represent a masked search key, whichis provided to ternary CAM array 315 for compare operations. Forpurposes of discussion herein, an asserted (e.g., logic high) mask bitmasks a corresponding bit comparison between the masked search key andthe corresponding ternary word, and a de-asserted mask bit (e.g., logiclow) allows the corresponding bit comparison between the masked searchkey and the corresponding ternary word.

In operation, second population counter 318 performs a population countcalculation on the masked search key to generate a minimum keypopulation count (K_(MIN)) and a maximum key population count (K_(MAX)),where K_(MIN) indicates how many bits of the masked search key have thesame predetermined logic value, and K_(MAX) indicates how many bits ofthe masked search key have the same predetermined logic value plus thenumber of asserted mask bits (i.e., the number of bits having adon't-care value) in the masked search key. Thus, for some embodiments,K_(MIN) indicates how many bits of the masked search key have a logic“1” value, and K_(MAX) indicates how many bits of the masked search keyhave a logic “1” value plus how many bits of the masked search key aredon't care values. Put differently, in this example K_(MAX) indicateshow many bits of the unmasked search key have a logic “1” value plus howmany bits of the block mask both are asserted and correspond to bits ofthe unmasked search key having a logic “0” value.

For example, FIG. 4 shows a 10-bit binary search key {0011001011} and a10-bit block mask {0001100010} that collectively represent a 10-bitmasked search key {001XX010X1}, where X represents a “don't care” value.Therefore, for this example, since there are three “1's” in the maskedsearch key, K_(MIN)=3. Similarly, since there are three “1's” and three“X's” in the masked search key, K_(MAX)=6.

Of course, for other embodiments, K_(MIN) can indicate the number ofbits within the corresponding masked search key having a logic “0”value, and K_(MAX) can indicate the number of bits of the correspondingmasked search key having a logic “0” value, plus the number of assertedmask bits within the corresponding masked search key. (In other words,K_(MAX) can indicate the number of bits of the masked search key havinga logic “0” value plus the number of bits of the masked search keyhaving a don't-care value.) In such embodiments, K_(MIN)=4 and K_(MAX)=7for the masked search key of FIG. 4. It is noted, however, that secondpopulation counter 318 should employ the same methodology as firstpopulation counter 316 when performing population count calculationsincluding, for example, the selection of the logic value to be countedin the population count calculation, and the determination of whetherthe search key is to be segmented. In some embodiments, the firstpopulation counter and the second population counter share the samecircuit.

Pre-compare circuit 314 includes first inputs to receive sets ofminimum/maximum data population counts D_(MIN)/D_(MAX) from pre-comparememory 312, includes a second input to receive a set of minimum/maximumkey population counts K_(MIN)/K_(MAX) from second population counter318, and includes a plurality of outputs coupled to corresponding rowsof the TCAM array 315. As described in more detail below, pre-comparecircuit 314 is configured to selectively enable rows in TCAM array 315in response to pre-compare operations between D_(MIN) and K_(MAX), andbetween D_(MAX) and K_(MIN). More specifically, for each row in TCAMarray 315, pre-compare circuit 314 asserts a corresponding enable signalEN to allow the row's match line to be pre-charged for a compareoperation only if the corresponding set of D_(MIN) and D_(MAX) valuesprovided by an associated row of pre-compare memory 312 results inK_(MAX)≧D_(MIN) and D_(MAX)≧K_(MIN). Otherwise, if K_(MAX)<D_(MIN) orD_(MAX)<K_(MIN) for a given ternary word, then pre-compare circuit 314does not assert the corresponding enable signal EN, which in turnprevents the match line of the corresponding TCAM row from beingpre-charged, thereby preventing the given ternary word fromparticipating in the compare operation with the search key.

As explained in more detail below with respect to FIG. 6, thepre-compare results of K_(MAX)≧D_(MIN) and D_(MAX)≧K_(MIN) indicatesthat there is a possibility of a match between the search key and anassociated ternary word stored in the TCAM array 315, and therefore theenable signal is asserted for the corresponding row in TCAM array 315 toenable the ternary word stored therein to participate in the compareoperation. Conversely, the pre-compare results of K_(MAX)<D_(MIN) orD_(MAX)<K_(MIN) indicates that there is no possibility of a matchbetween the search key and an associated ternary word stored in the TCAMarray 315, and therefore the enable signal is de-asserted for thecorresponding row in TCAM array 315 to prevent the ternary word storedtherein from participating in the compare operation.

By selectively pre-charging each match line only when a match between anassociated ternary word and the search key is possible in TCAM array315, power consumption associated with pre-charging and discharging thematch lines during successive compare operations is reduced. Forexample, for each match line in TCAM array 315 that is disabled (e.g.,not pre-charged) in response to mismatch conditions in pre-comparecircuit 314, power consumption associated with pre-charging thecorresponding match line in TCAM array 315 is reduced. The reduction inpower consumption associated with pre-charging the match lines in TCAMarray 315 can be increased by increasing the percentage of mismatchconditions in the pre-compare operations.

FIG. 3B shows one embodiment of CAM array 315 of FIG. 3A. Array 315includes a plurality of CAM cells 302 organized in any number of rowsand columns. CAM cells 302 may be any suitable well-known SRAM-based,DRAM-based, non-volatile, or other ternary (or quaternary) CAM cell.Each row of CAM array 315 may also include one or more validity bits.Each row of CAM cells 302 is coupled to a match line ML and to a wordline WL. Each word line WL is driven by address decoder 120 to selectone or more rows of CAM cells 302 for writing or reading. Each matchline ML provides the match results of a compare operation between thesearch key and a CAM word to priority encoder 150 and to match logic160. Each column of CAM cells 302 in CAM array 315 is coupled to acomplementary bit line pair BL and BLB and to a complementary comparandline pair CL and CLB. The bit line pairs BL/BLB are each coupled toread/write circuit 140, and the comparand line pairs CL/CLB are eachcoupled to block mask register 340, which in turn is coupled tocomparand register 130 via global comparand line pairs GCL/GCLB.

During compare operations, a match line ML indicates a match conditionfor the row only if all CAM cells 302 in that row match the search key.As described above, for some embodiments, the match lines ML areselectively pre-charged for compare operations with the search key inresponse to match results in pre-compare circuit 314. If any CAM cell302 in the row does not match the search key, the CAM cell(s) 302discharges the match line ML toward ground potential (i.e., logic low)to indicate the mismatch condition. Conversely, if all CAM cells 302match the search key, the match line ML remains in a charged (i.e.,logic high) state to indicate the match condition.

FIG. 5 is a pre-compare circuit 500 that is one embodiment ofpre-compare circuit 314 of FIG. 3A. Pre-compare circuit 500 includes aplurality of segments 510, each having a first comparator 512, a secondcomparator 514, and an AND gate 516. Each segment 510 is coupled to acorresponding row of pre-compare memory 312 to receive a set ofD_(MIN)/D_(MAX) values for an associated ternary word stored in the TCAMarray 315 (not shown in FIG. 5 for simplicity), and is coupled to secondpopulation counter 318 (not shown in FIG. 5 for simplicity) to receivethe set of K_(MIN)/K_(MAX) for the masked search key. For example,segment 510(1) receives D_(MIN)(1)/D_(MAX)(1) associated with ternaryword (1), segment 510(2) receives D_(MIN)(2)/D_(MAX)(2) associated withternary word (2), and so on. In operation, each segment 510 generates anenable signal EN that selectively pre-charges the match line of acorresponding row in ternary CAM array 315 in response to comparisonresults from first comparator 512 and second comparator 514. Morespecifically, the first comparator 512 receives D_(MIN) and K_(MAX) andgenerates a first Boolean result as true if K_(MAX)≧D_(MIN). Similarly,the second comparator 514 receives D_(MAX) and K_(MIN) and generates asecond Boolean result as true if D_(MAX)≧K_(MIN). The AND gate 516receives the results from first comparator 512 and second comparator514, and asserts the enable signal EN (e.g., to logic high) if theresults from first comparator 512 and second comparator 514 are bothtrue (i.e., if K_(MAX)≧D_(MIN) and D_(MAX)≧K_(MIN)). The logic highstate of EN pre-charges the match line of a corresponding row in TCAMarray 315, thereby enabling the row to participate in the compareoperation with the search key. Otherwise, if either K_(MAX)<D_(MIN) orD_(MAX)<K_(MIN), logic gate 516 de-asserts the enable signal EN (e.g.,to logic low), thereby not pre-charging the corresponding match line andpreventing the associated row of TCAM array 315 from participating inthe compare operation with the search key.

As illustrated in FIG. 6, the calculation of minimum and maximum datapopulation counts D_(MIN)/D_(MAX) depicts the data population space,which is bounded by the minimum and maximum number of bits in acorresponding ternary word which could have the same predetermined logicvalue (e.g., but for the asserted mask bits in the corresponding maskword). Under the same principle, the calculation of minimum and maximumkey population counts K_(MIN)/K_(MAX) depicts the search key populationspace, which is bounded by the minimum and maximum number of bits in themasked search key which could have the same predetermined logic value(e.g., but for the asserted mask bits in the block mask). Therefore, ifthe comparison operations among the four population counts indicate thatD_(MAX)≧K_(MIN) and K_(MAX)≧D_(MIN), then there is an overlapping area610 between the data population space and the key population space,meaning a possibility exists that the corresponding ternary word canmatch the (masked) search key.

Conversely, if D_(MAX)<K_(MIN), then the maximum number of bits whichcould match a “1” in the corresponding ternary word is still smallerthan the minimum number of “1's” in the masked search key, and thereforea match between the corresponding ternary word and the masked search keyin TCAM array 315 is impossible. Similarly, if K_(MAX)<D_(MIN), then themaximum number of bits which could match a “1” in the masked search keyis still smaller than the minimum number of “1's” in the correspondingternary word, and therefore a match between the corresponding ternaryword and the masked search key is impossible. As a result, if eitherD_(MAX)<K_(MIN) or K_(MAX)<D_(MIN), meaning there is no overlapping area610 and a match in TCAM array 315 is impossible, pre-compare circuit 314de-asserts the associated EN signal, and thus does not pre-charge thematch line of the corresponding row in ternary CAM array 315, therebysaving the power consumption associated with alternatively pre-chargingand discharging the corresponding match line unnecessarily.

Referring again to FIG. 5, for other embodiments, each segment 510 ofpre-compare circuit 500 can include a single comparator (e.g.,comparator 512) that compares D_(MIN) with K_(MAX) and then comparesD_(MAX) with K_(MIN) in a pipelined manner, whereby the results of theearlier compare operation (e.g., D_(MIN) with K_(MAX)) are stored in asuitable memory element (not shown for simplicity) and then combinedwith the results of the latter compare operation (e.g., D_(MAX) withK_(MIN)) to generate the corresponding enable signal EN. Thus, if thetwo pipelined compare operations result in asserted logic high signalsto indicate that K_(MAX)≧D_(MIN) and D_(MAX)≧K_(MIN), then thecorresponding enable signal EN is asserted to enable the correspondingrow of TCAM array 315 to participate in the compare operation.Otherwise, the corresponding enable signal EN is de-asserted to preventthe corresponding row of TCAM array 315 from participating in thecompare operation.

FIG. 7 is a block diagram of a row 700 that is one embodiment of therows in TCAM array 315 of FIGS. 3A-3B. Row 700 is shown to include amatch line control circuit 720 and a plurality of CAM cells 302. Forsimplicity, the plurality of CAM cells 302 are represented collectivelyin FIG. 7. Match line control circuit 720 has power terminals connectedto VDD and to ground potential, and includes a first input to receivethe enable signal EN from a corresponding segment 510 of pre-comparecircuit 500 of FIG. 5, a second input to receive a pre-charge signalPCLK, and an output coupled to the match line ML. CAM cells 302, whichare connected between match line ML and ground potential, include datainputs to receive the CAM words and include compare inputs to receivethe search key.

During a pre-charge phase of a compare operation, the pre-charge clocksignal PCLK is asserted (e.g., to logic high), and the enable signal ENis selectively asserted by the pre-compare circuit 314. Morespecifically, if the enable signal EN is asserted (e.g., to logic high)in response to D_(MAX)≧K_(MIN) and K_(MAX)≧D_(MIN) (which indicatesthere is a possibility that the search key can match the ternary wordstored in the row 700), then the match line control circuit 720pre-charges the match line high towards VDD, thereby enabling the row700 for the compare operation. Then, during the evaluation phase, if thesearch key matches the ternary word stored in row 700, the match line MLremains in its logic high state to indicate the match condition.Conversely, if the search key does not match the ternary word stored inrow 700, the mismatching CAM cell(s) 302 discharge the match line ML lowtowards ground potential to indicate the mismatch condition.

However, if the enable signal EN is de-asserted (e.g., to logic low) inresponse to either D_(MAX)<K_(MIN) or K_(MAX)<D_(MIN) (which indicatesthere is no possibility that the search key can match the ternary wordstored in the row 700), then the match line control circuit 720 does notpre-charge the match line, thereby disabling the row 700 for the compareoperation and reducing power consumption associated with charging anddischarging the match line during compare operations.

Match line control circuit 720 can be any well-known circuit thatselectively charges the match line ML for compare operations in responseto the enable signal EN. For example, various match line controlcircuits disclosed in commonly-owned U.S. Pat. No. 7,050,318, which isincorporated by reference herein in its entirety, can be used for matchline control circuit 720 of FIG. 7.

FIG. 8 is a flowchart illustrating an exemplary pre-compare operationfor embodiments of the CAM device of FIGS. 3A-3B. First, the firstpopulation counter 316 generates a data set including a minimum datapopulation count (D_(MIN)) and a maximum data population count (D_(MAX))for each ternary word stored in the CAM array 315 (802). D_(MIN) andD_(MAX) are calculated as described above. Next, the second populationcounter 318 generates a set of population counts including a minimum keypopulation count (K_(MIN)) and a maximum key population count (K_(MAX))for the search key (804). K_(MIN) and K_(MAX) are calculated asdescribed above.

Next, pre-compare circuit 314 compares the values of D_(MIN) and K_(MAX)to generate a first result indicating whether K_(MAX)≧D_(MIN) (806), andcompares the values of D_(MAX) and K_(MIN) to generate a second resultindicating whether D_(MAX)≧K_(MIN) (808). Then, if the first and secondresults indicate that D_(MAX)≧K_(MIN) and K_(MAX)≧D_(MIN) (whichindicates there is a possibility that the search key can match theternary word stored in the row 700), as tested at 810, then the matchline control circuit 720 pre-charges the match line high towards VDD,thereby enabling the row 700 for the compare operation (812).Conversely, if the first and second results indicate that eitherD_(MAX)<K_(MIN) or K_(MAX)<D_(MIN) (which indicates there is nopossibility that the search key can match the ternary word stored in therow 700), as tested at 810, then the match line control circuit 720 doesnot pre-charge the match line, thereby disabling the row 700 for thecompare operation (814).

While particular embodiments have been shown and described, it will beobvious to those skilled in the art that changes and modifications maybe made without departing from this disclosure in its broader aspectsand, therefore, the appended claims are to encompass within their scopeall such changes and modifications as fall within the true spirit andscope of this disclosure.

Further, it should be noted that the various circuits disclosed hereinmay be described using computer aided design tools and expressed (orrepresented), as data and/or instructions embodied in variouscomputer-readable media, in terms of their behavioral, registertransfer, logic component, transistor, layout geometries, and/or othercharacteristics. Formats of files and other objects in which suchcircuit expressions may be implemented include, but are not limited to,formats supporting behavioral languages such as C, Verilog, and VHDL,formats supporting register level description languages like RTL, andformats supporting geometry description languages such as GDSII, GDSIII,GDSIV, CIF, MEBES and any other suitable formats and languages.Computer-readable media in which such formatted data and/or instructionsmay be embodied include, but are not limited to, non-volatile (and thusnon-transitory) storage media in various forms (e.g., optical, magneticor semiconductor storage media).

1.-32. (canceled)
 33. A content addressable memory (CAM) device,comprising: a CAM array having a plurality of rows of CAM cells, eachrow of the plurality of rows storing an associated word and beingcoupled to a corresponding match line; and a pre-compare circuit,coupled to the CAM array, configured to compare a first data populationcount with a first key population count and a second data populationcount with a second key population count to determine whether a searchkey can match the word stored in each row of the plurality of rows. 34.The CAM device of claim 33, wherein the pre-compare circuit is furtherconfigured to selectively enable the match lines of corresponding rowsof the CAM array to be pre-charged in response to the comparisons. 35.The CAM device of claim 34, wherein the pre-compare circuit is furtherconfigured to assert a corresponding enable signal to allow the matchlines of corresponding rows of the CAM array to be pre-charged when thefirst key population count is greater than or equal to the first datapopulation count and the second data population count is greater than orequal to the second key population count.
 36. The CAM device of claim35, wherein the pre-compare circuit is further configured to de-assertthe associated enable signal when either: the second data populationcount is less than the second key population count; or the first keypopulation count is less than the first data population count.
 37. TheCAM device of claim 35, wherein: the pre-compare circuit comprises acomparator configured to conduct the comparisons sequentially togenerate a first comparison result and a second comparison result,wherein: the first comparison result is stored in a memory; and a secondcomparison result is combined with the first comparison result togenerate the corresponding enable signal.
 38. The CAM device of claim35, further comprising match-line control circuitry configured topre-charge the match lines of corresponding rows of the CAM array inresponse to the enable signal.
 39. The CAM device of claim 33, whereinpre-compare circuit comprises: a first input to receive the first andsecond data population counts from a pre-compare memory; a second inputto receive the first and second key population counts from a populationcounter; and a plurality of outputs coupled to corresponding rows of theCAM array.
 40. The CAM device of claim 33, wherein: the first and seconddata population counts are based on bits of the word stored in each rowof the plurality of rows of the CAM array; and the first and second keypopulation counts are based on bits of a masked search key.
 41. A methodof comparing a search key with a plurality of words stored incorresponding rows of a content addressable memory (CAM) array, themethod comprising: generating first data population count and a seconddata population count for the plurality of words; generating a first keypopulation count and a second key population count for the search key;pre-charging match lines corresponding to rows of the CAM array when thefirst key population count is greater than or equal to the first datapopulation count and the second data population count is greater than orequal to the second key population count.
 42. The method of claim 41,wherein: the first and second data population counts are based on bitsof the word stored in each row of the CAM array and the first and secondkey population counts are based on bits of a masked search key.
 43. Themethod of claim 41, further comprising: de-asserting an enable signalwhen the second data population count is less than the second keypopulation count or the first key population count is less than thefirst data population count.
 44. The method of claim 41, wherein thepre-charging the match lines comprises: conducting comparisonsequentially to generate a first comparison result and a secondcomparison result; storing the first comparison result in memory; andcombining the first comparison result with the second comparison resultto generate a corresponding enable signal, wherein the correspondingenable signal indicates that the match lines are to be to bepre-charged.
 45. A content addressable memory (CAM) device for comparinga search key with a plurality of ternary words, comprising: a CAM arrayhaving a plurality of rows of CAM cells, each row of the plurality ofrows storing an associated word and being coupled to a correspondingmatch line; a pre-compare memory that stores a first data populationcount and a second data population count for a corresponding word storedin the CAM array; and a pre-compare circuit configured to compare thefirst data population count with a first key population count and thesecond data population count with a second key population count.
 46. TheCAM device of claim 45, wherein the pre-compare circuit is furtherconfigured to selectively enable the match lines of corresponding rowsof the CAM array to be pre-charged in response to the comparisons. 47.The CAM device of claim 46, wherein the pre-compare circuit is furtherconfigured to assert a corresponding enable signal to allow the matchlines of corresponding rows of the CAM array to be pre-charged when thefirst key population count is greater than or equal to the first datapopulation count and the second data population count is greater than orequal to the second key population count.
 48. The CAM device of claim47, wherein the pre-compare circuit is further configured to de-assertthe associated enable signal when either: the second data populationcount is less than the second key population count; or the first keypopulation count is less than the first data population count.
 49. TheCAM device of claim 47, wherein: the pre-compare circuit comprises acomparator configured to conduct the comparisons sequentially togenerate a first comparison result and a second comparison result,wherein: the first comparison result is stored in a memory; and a secondcomparison result is combined with the first comparison result togenerate the corresponding enable signal.
 50. The CAM device of claim47, further comprising match-line control circuitry configured topre-charge the match lines of corresponding rows of the CAM array inresponse to the enable signal.
 51. The CAM device of claim 45, whereinpre-compare circuit comprises: a first input to receive the first andsecond data population counts from a pre-compare memory; a second inputto receive the first and second key population counts from a populationcounter; and a plurality of outputs coupled to corresponding rows of theCAM array.
 52. The CAM device of claim 45, wherein: the first and seconddata population counts are based on bits of the word stored in each rowof the plurality of rows of the CAM array; and the first and second keypopulation counts are based on bits of a masked search key.